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| Знайдено в інших БД: | Реферативна база даних (14) |
Список видань за алфавітом назв: Авторський покажчик Покажчик назв публікацій  |
Пошуковий запит: (<.>A=Borblik V$<.>) | |||
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Загальна кількість знайдених документів : 6 Представлено документи з 1 до 6 |
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| 1. | 
Borblik V. L. Negative magnetoresistance of heavily doped silicon p-n junction [Електронний ресурс] / V. L. Borblik, I. A. Rudnev, Yu. M. Shwarts, M. M. Shwarts // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 1. - С. 88-90. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_1_16 At the liquid helium temperature and under application of magnetic fields up to 9,4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the diode. Observed magnetoresistance of the diode is proved as a whole to be extremely small, negative at low fields and changing its sign when the field increases. In the positive region of the diode magnetoresistance, its field dependence is quadratic at first and then becomes close to the linear one. With increase in the current through the diode, the negative component of the diode magnetoresistance decreases, and the smaller its value, the more extended is the quadratic section and the shorter is the linear one. The results are interpreted as caused by hopping conduction over a system of electron "lakes" in the region of p - n | ||
| 2. |
Aleinikov A. B. Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown [Електронний ресурс] / A. B. Aleinikov, V. A. Berezovets, V. L. Borblik, M. M. Shwarts, Yu. M. Shwarts // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 3. - С. 288-293. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_3_20 Effect of magnetic field (up to 14 T) on current-voltage characteristics of silicon n<^>+ | ||
| 3. |
Borblik V. L. Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties [Електронний ресурс] / V. L. Borblik, A. A. Korchevoi, A. S. Nikolenko, V. V. Strelchuk, A. M. Fonkich, Yu. M. Shwarts, M. M. Shwarts // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 3. - С. 237-242. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_3_7 The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monoton ically with decreasing their thickness. Electro conductivity of such the films proves to be high enough (1 - 10 <$Eroman {Ohm~cdot~cm}> at room temperature) and has a character of variable range hopping conduction of Mott's type. The hops, presumably, take place through the localized states connected with the grain boundaries. | ||
| 4. |
Borblik V. L. Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode [Електронний ресурс] / V. L. Borblik // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 168-172. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_5 Dependences of the depletion widths in a radial core-shell p-n diode on the radius of metallurgical boundary of the p-n junction have been studied theoretically in detail. While the depletion width of the core increases with decreasing the radius, the depletion width of the shell, on the contrary, decreases. This is the consequence of cylindrical symmetry of the structure. And the total depletion width of the p-n junction can both increase and decrease depending on doping levels of the core and shell. A number of cases is presented where the dependence of depletion width of the p-n junction on its curvature influences on the diode current-voltage characteristics. | ||
| 5. |
Borblik V. L. New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures [Електронний ресурс] / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 195-198. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_10 The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) has been analyzed. In addition to previous investigations of the influence of magnetic fields up to 9,4 T on this tunnel current at 4,2 K, now the measurements have been carried out up to 14 T at temperatures lower than the liquid helium temperature. Under these conditions, the transfer to saturation of the diode magnetoresistance was observed, which agrees with the results predicted theoretically for the hopping conduction via impurity centers in high magnetic fields. | ||
| 6. |
Borblik V. L. Electrostatics of the nanowire radial p-i-n diode [Електронний ресурс] / V. L. Borblik // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 201-205. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_12 In this paper, the electrostatic theory of the nanowire radial core-shell p-i-n homojunction has been considered. The carried out calculations show that, in contrast to planar p-i-n diode, the built-in electric field of the nanowire radial p-i-n diode proves to be inhomogeneous. This field reaches its maximum in the region of the i-layer adjoining to the core. When moving away the i-layer from the nanowire center, the degree of field inhomogeneity decays, and both edge values of the field in the i-layer reach eventually the magnitude, which takes place in analogous planar p-i-n diode. This magnitude can be both higher and lower than the maximal field in the nanowire p-i-n diode (depending on doping conditions). Simultaneously, the capacitance of the nanowire p-i-n diode can both increase and decrease in its value, going, at the same time, to weak voltage dependence inherent to the planar p-i-n diode. | ||
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